Patricio Farrell
Applied Mathematician Weierstrass Institute Berlin
Patricio Farrell

Publications

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Submitted publications

  1. R. Finn, M. O’Donovan, P. Farrell, T. Koprucki, S. Schulz. Multiscale simulations of carrier transport in multi-quantum well (Al,Ga)N-based deep-UV LEDs: Alloy disorder, acceptor activation, and injection efficiency. Submitted, 2026

  2. B. Spetzler, E. Spetzler, S. Zamankhani, D. Abdel, P. Farrell, K.-U. Sattler, M. Ziegler. Physics-Guided Sequence Modeling for Fast Simulation and Design Exploration of 2D Memristive Devices. Submitted, 2025. arXiv

  3. Z. Amer, A. Avdzhieva, M. Bongarti, P. Dvurechensky, P. Farrell, U. Gotzes, F. Hante, A. Karsai, S. Kater, M. Landstorfer, M. Liero, D. Peschka, L. Plato, K. Spreckelsen, J. Taraz, B. Wagner. Modeling hydrogen embrittlement for pricing degradation in gas pipelines. WIAS preprint 3201, 2025

Peer-reviewed journal publications

  1. G. Ali, Z. Amer, P. Farrell, N. Rotundo. Classical solutions for a van Roosbroeck-Helmholtz model for a semiconductor laser diode. Nonlinearty, 39: 075015, 2026. WIAS preprint 3228

  2. D. Abdel, J. Relle, T. Kirchartz, P. Jaap, J. Fuhrmann, S. Burger, C. Becker, K. Jäger, P. Farrell. How nanotextured interfaces influence the electronics in perovskite solar cells. EES Sol., 2: 436–447, 2026. doi:  10.1039/D5EL00208G. arXiv

  3. Y. Hadjimichael, O. Brandt, C. Merdon, C. Manganelli, P. Farrell. Strain distribution in zincblende and wurtzite GaAs nanowires bent by a one-sided (In, Al)As shell: consequences for torsion, chirality, and piezoelectricity. Physical Review B, 113: 165303, 2026. doi:  10.1103/pjq7-8gll. WIAS preprint 3141

  4. D. Abdel, M. Herda, M. Ziegler, C. Chainais-Hillairet, B. Spetzler, P. Farrell. Numerical analysis and simulation of lateral memristive devices: Schottky, ohmic, and multi-dimensional electrode models. Computers and Mathematics with Applications, 199: 286–308, 2025. arXiv

  5. M. O’Donovan, R. Finn, P. Farrell, T. Streckenbach, J. Moatti, S. Schulz, T. Koprucki. Developing a hybrid single band carrier transport model for (Al,Ga)N heterostructures. Journal of Computational Electronics, 24(114), 2025. doi:  10.1007/s10825-025-02333-2

  6. G. Alì, P. Farrell, N. Rotundo. Forward lateral photovoltage scanning problem: Perturbation approach and existence-uniqueness analysis. Journal of Mathematical Analysis and Applications, 541(2), 2025. doi:  10.1016/j.jmaa.2024.128725. arXiv

  7. Y. Hadjimichael, C. Merdon, M. Liero, P. Farrell. An energy-based finite-strain model for 3D heterostructured materials and its validation by curvature analysis. International Journal for Numerical Methods in Engineering, 125(19): e7508, 2024. doi:  10.1002/nme.7508. WIAS preprint 3064

  8. S. Piani, P. Farrell, W. Lei, N. Rotundo, L. Heltai. Data-driven solutions of ill-posed inverse problems arising from doping reconstruction in semiconductors. Applied Mathematics in Science and Engineering, 32(1), 2024. doi:  10.1080/27690911.2024.2323626. arXiv

  9. W. Lei, S. Piani, P. Farrell, N. Rotundo, L. Heltai. A weighted Hybridizable Discontinuous Galerkin method for drift-diffusion problems. Journal of Scientific Computing, 99(33), 2024. doi:  10.1007/s10915-024-02481-w. arXiv

  10. M. O’Donovan, P. Farrell, J. Moatti, T. Streckenbach, T. Koprucki, S. Schulz. Impact of random alloy fluctuations on the carrier distribution in multi-color (In,Ga)N/GaN quantum well systems. Physical Review Applied, 21: 024052, 2024. doi:  10.1103/PhysRevApplied.21.024052. arXiv

  11. B. Spetzler, D. Abdel, F. Schwierz, M. Ziegler, P. Farrell. The Role of Mobile Point Defects in Two-Dimensional Memristive Devices. Advanced Electronic Materials, 10(1), 2024. doi:  10.1002/aelm.202300635. arXiv

  12. P. Farrell, J. Moatti, M. O’Donovan, S. Schulz, T. Koprucki. Importance of satisfying thermodynamic consistency in light emitting diode simulations. Optical and Quantum Electronics, 55(978), 2023. doi:  10.1007/s11082-023-05234-5

  13. D. Abdel, N. Courtier, P. Farrell. Volume exclusion effects in perovskite charge transport modeling. Optical and Quantum Electronics, 55(884), 2023. doi:  10.1007/s11082-023-05125-9. WIAS Preprint 2965

  14. R. Finn, M. O’Donovan, P. Farrell, J. Moatti, T. Streckenbach, T. Koprucki, S. Schulz. Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al, Ga)N light emitters. Applied Physics Letters, 122(24), 2023. doi:  10.1063/5.0148168

  15. D. Abdel, C. Chainais-Hillairet, P. Farrell, M. Herda. Numerical analysis of a finite volume scheme for charge transport in perovskite solar cells. IMA Journal of Numerical Analysis, 2023. doi:  10.1093/imanum/drad034. arXiv

  16. M. O’Donovan, P. Farrell, T. Streckenbach, T. Koprucki, S. Schulz. Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems. Optical and Quantum Electronics, 54(405), 2022. doi:  10.1007/s11082-022-03752-2

  17. P. Farrell, S. Kayser, N. Rotundo. Modeling and simulation of the lateral photovoltage scanning method. Computer and Mathematics with Applications, 102: 248–260, 2021. doi:  10.1016/j.camwa.2021.10.017. WIAS preprint 2784

  18. S. Kayser, N. Rotundo, N. Dropka, P. Farrell. Assessing doping inhomogeneities in GaAs crystal via simulations of lateral photovoltage scanning method. Journal of Crystal Growth, 571: 126248, 2021. doi:  10.1016/j.jcrysgro.2021.126248

  19. M. O’Donovan, D. Chaudhuri, T. Streckenbach, P. Farrell, S. Schulz, T. Koprucki. From atomistic tight binding theory to macroscale drift diffusion: multiscale modeling and numerical simulation of uni-polar charge transport in (In,Ga)N devices with random fluctuations. Journal of Applied Physics, 130(6): 065702, 2021. doi:  10.1063/5.0059014

  20. D. Abdel, P. Vagner, J. Fuhrmann, P. Farrell. Modelling charge transport in perovskite solar cells: Potential-based and limiting ion vacancy depletion. Electrochimica Acta, 390: 138696, 2021. doi:  10.1016/j.electacta.2021.138696. WIAS preprint 2780

  21. D. Chaudhuri, M. O’Donovan, T. Streckenbach, O. Marquardt, P. Farrell, S. K. Patra, T. Koprucki, S. Schulz. Multiscale simulations of the electronic structure of III-nitride quantum wells with varied Indium content: Connecting atomistic and continuum-based models. Journal of Applied Physics, 129: 073104, 2021. doi:  10.1063/5.0031514

  22. S. Kayser, P. Farrell, N. Rotundo. Detecting striations via the lateral photovoltage scanning method without screening effect. Optical and Quantum Electronics, 53: 288, 2021. doi:  10.1007/s11082-021-02911-1. WIAS preprint 2785

  23. D. Abdel, P. Farrell, J. Fuhrmann. Assessing the quality of the excess chemical potential flux scheme for degenerate semiconductor device simulation. Optical and Quantum Electronics, 53(163), 2021. doi:  10.1007/s11082-021-02803-4. WIAS preprint 2787

  24. I. Selmer, P. Farrell, I. Smirnova, P. Gurikov. Comparison of Finite Difference and Finite Volume Simulations for a Sc-Drying Mass Transport Model. Gels, 6(45), 2020. doi:  10.3390/gels6040045

  25. P. Farrell, D. Peschka. Nonlinear diffusion, boundary layers and nonsmoothness: Analysis of challenges in drift-diffusion semiconductor simulations. Computers and Mathematics with Applications, pp. 3731–3747, 2019. doi:  j.camwa.2019.06.007. WIAS preprint 2486

  26. M. Patriarca, P. Farrell, J. Fuhrmann, T. Koprucki. Highly Accurate Quadrature-based Scharfetter-Gummel Schemes for Charge Transport in Degenerate Semiconductors. Computer Physics Communications, 235: 40–49, 2018. doi:  10.1016/j.cpc.2018.10.004. WIAS preprint 2498

  27. I. Selmer, A.-S. Behnecke, P. Farrell, A. B. Morales, P. Gurikov, I. Smirnova. Model development for sc-drying kinetics of aerogels: Part 2. Packed bed of spherical particles. Journal of Supercritical Fluids, 147: 149–161, 2018. doi:  10.1016/j.supflu.2018.07.006

  28. P. Farrell, M. Patriarca, J. Fuhrmann, T. Koprucki. Comparison of Thermodynamically Consistent Charge Carrier Flux Discretizations for Fermi-Dirac and Gauss-Fermi Statistics. Optical and Quantum Electronics, 50(101), 2018. doi:  10.1007/s11082-018-1349-8. WIAS preprint 2424

  29. P. Farrell, A. Linke. Uniform Second Order Convergence of a Complete Flux Scheme on Unstructured 1D Grids for a Singularly Perturbed Advection–Diffusion Equation and Some Multidimensional Extensions. Journal of Scientific Computing, 72(1): 373–395, 2017. doi:  10.1007/s10915-017-0361-7. WIAS preprint 2286

  30. F. Dassi, L. Kamenski, P. Farrell, H. Si. Tetrahedral Mesh Improvement Using Moving Mesh Smoothing, Lazy Searching Flips, and RBF Surface Reconstruction. Computer-Aided Design, 2017. doi:  10.1016/j.cad.2017.11.010. WIAS preprint 2373

  31. P. Farrell, T. Koprucki, J. Fuhrmann. Computational and Analytical Comparison of Flux Discretizations for the Semiconductor Device Equations. Journal of Computational Physics, 346: 497–513, 2017. doi:  10.1016/j.jcp.2017.06.023. WIAS preprint 2331

  32. F. Dassi, P. Farrell, H. Si. A Novel Surface Remeshing Scheme via Radial Basis Functions and Higher-Dimensional Embedding. SIAM Journal on Scientific Computing, 39(3): B522–B547, 2017. doi:  10.1137/16m1077015. WIAS preprint 2265

  33. P. Farrell, K. Gillow, H. Wendland. Multilevel Interpolation of Divergence-Free Vector Fields. IMA Journal of Numerical Analysis, 37(1): 332–353, 2017. doi:  10.1093/imanum/drw006. WIAS preprint 2096

  34. F. Dassi, P. Farrell, H. Si. An Anisoptropic Surface Remeshing Strategy Combining Higher Dimensional Embedding with Radial Basis Functions. Procedia Engineering, 164: 72–83, 2016. doi:  10.1016/j.proeng.2016.11.022

  35. P. Farrell, J. Pestana. Block Preconditioners for Linear Systems arising from Multiscale Collocation with Compactly Supported RBFs. Numerical Linear Algebra with Applications, 22: 731–747, 2015. doi:  10.1002/nla.1984. WIAS preprint 2037

  36. T. Koprucki, N. Rotundo, P. Farrell, D. H. Doan, J. Fuhrmann. On Thermodynamic Consistency of a Scharfetter-Gummel Scheme Based on a Modified Thermal Voltage for Drift-Diffusion Equations with Diffusion Enhancement. Optical and Quantum Electronics, 47(6): 1327–1332, 2015. doi:  10.1007/s11082-014-0050-9. WIAS preprint 2013

  37. P. Farrell, H. Wendland. RBF Multiscale Collocation for Second Order Elliptic Boundary Value Problems. SIAM Journal on Numerical Analysis, 51(4): 2403–2425, 2013. doi:  10.1137/120898383. OCCAM preprint 13/22

Book chapters and theses

  1. P. Farrell. Drift-diffusion models for innovative semiconductor devices and their numerical solution. Habilitation thesis, 2023. doi:  10.17169/refubium-37657

  2. P. Farrell, N. Rotundo, D. H. Doan, M. Kantner, J. Fuhrmann, T. Koprucki. Drift-Diffusion Models. In J. Piprek (ed.), Handbook of Optoelectronic Device Modeling and Simulation. volume 2, chapter 50, pp. 733–771. CRC Press, 2017. doi:  10.4324/9781315152318. WIAS preprint 2263

  3. P. Farrell. Silicon - An Electronic Hybrid. In L. Pense (ed.), Material Effects – Product Designs, Photographs, Experiments. pp. 138–143. Jovis, 2018

  4. P. Farrell. Multilevel Collocation with Radial Basis Functions. Ph.D. thesis, University of Oxford, 2014. Thesis

  5. P. Farrell. Algebraic Image Reconstruction in Computed Tomography with Radial Basis Functions. Diplom thesis, University of Hamburg, 2010

Peer-reviewed proceedings

  1. Y. Hadjimichael, O. Marquardt, C. Merdon, P. Farrell. Band structures in highly strained 3D nanowires. In 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). pp. 119–120. IEEE, 2022. doi:  10.1109/NUSOD54938.2022.9894837

  2. D. Abdel, N. Courtier, P. Farrell. Volume exclusion effects in perovskite charge transport modeling. In 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). pp. 107–108. IEEE, 2022. doi:  10.1109/NUSOD54938.2022.9894826

  3. S. Piani, W. Lei, L. Heltai, N. Rotundo, P. Farrell. Data-driven doping reconstruction. In 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). pp. 109–110. IEEE, 2022. doi:  10.1109/NUSOD54938.2022.9894774

  4. M. O’Donovan, P. Farrell, T. Streckenbach, T. Koprucki, S. Schulz. Carrier transport in (In,Ga)N quantum well systems: Connecting atomistic tight-binding electronic structure theory to drift-diffusion simulations. In 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). pp. 97–98. IEEE, 2022. doi:  10.1109/NUSOD54938.2022.9894745

  5. J. Moatti, P. Farrell. Comparison of flux discretizations for varying band edge energies. In 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). pp. 103–104. IEEE, 2022. doi:  10.1109/NUSOD54938.2022.9894742

  6. S. Schulz, M. O’Donovan, D. Chaudhuri, S. K. Patra, P. Farrell, O. Marquardt, T. Streckenbach, T. Koprucki. Connecting atomistic and continuum models for (In,Ga)N quantum wells: From tight-binding energy landscapes to electronic structure and carrier transport. In 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). pp. 135–136. IEEE, 2021. doi:  10.1109/NUSOD52207.2021.9541461

  7. S. Schulz, D. Chaudhuri, M. O’Donovana, S. K. Patra, T. Streckenbach, P. Farrell, O. Marquardt, T. Koprucki. Multi-scale modeling of electronic, optical, and transport properties of III-N alloys and heterostructures. SPIE Photonics West, 11274: 157 – 166, 2020. doi:  10.1117/12.2551055

  8. S. Kayser, N. Rotundo, J. Fuhrmann, N. Dropka, P. Farrell. The lateral photovoltage scanning method (LPS): Understanding doping variations in silicon crystals. In 2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). pp. 49–50. IEEE, 2020. doi:  10.1109/NUSOD49422.2020.9217779

  9. D. Abdel, J. Fuhrmann, P. Farrell. Comparison of Scharfetter-Gummel Schemes for (Non-)Degenerate Semiconductor Device Simulation. In 2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). pp. 107–108. IEEE, 2020. doi:  10.1109/NUSOD49422.2020.9217691

  10. M. Lübbering, J. Kunkel, P. Farrell. What Company Does My News Article Refer to? Tackling Multi Class Problems With Topic Modeling. In Proceedings of the Conference on "Lernen, Wissen, Daten, Analysen", Berlin, Germany, September 30 - October 2, 2019. pp. 353–364. 2019. doi:  10.20347/WIAS.PREPRINT.2621

  11. T. Koprucki, T. Streckenbach, P. Farrell, O. Marquardt, D. Chaudhuri, M. O’Donovan, S. Patra, S. Schulz. Towards multiscale modeling of III-N-based LEDs. In 19th International Conference on Numerical Simulation of Optoelectronic Devices. 2019

  12. M. Patriarca, P. Farrell, T. Koprucki, M. Auf der Maur. Highly Accurate Discretizations for non-Boltzmann Charge Transport in Semiconductors. In 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). pp. 53–54. IEEE, 2018. doi:  10.1109/NUSOD.2018.8570265

  13. P. Farrell, T. Koprucki, J. Fuhrmann. Comparison of Consistent Flux Discretizations for Drift Diffusion beyond Boltzmann Statistics. In J. Piprek, M. Willatzen (eds.), 2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). pp. 219–220. IEEE, 2017. doi:  10.1109/NUSOD.2017.8010070

  14. P. Farrell, A. Linke. Uniform Second Order Convergence of a Complete Flux Scheme on Nonuniform 1D Grids. Finite Volumes for Complex Applications VIII - Methods and Theoretical Aspects, Clément Cancès and Pascal Omnes (eds.), pp. 303–311, 2017

  15. P. Farrell, T. Koprucki, J. Fuhrmann. Comparison of Scharfetter-Gummel Flux Discretizations Under Blakemore Statistics. In P. Quintela, P. Barral, D. Gómez, F. J. Pena, J. Rodríguez, P. Salgado, M. E. Vázquez-Méndez (eds.), Progress in Industrial Mathematics at ECMI 2016. pp. 91–97. Springer, Berlin, 2017. doi:  10.1007/978-3-319-63082-3_13

Software

  1. D. Abdel, Z. Amer, P. Farrell, J. Fuhrmann, P. Jaap, E. Kuhn, M. O’Donovan, M. Osewold, P. Thiele. ChargeTransport.jl. Version: 1.9.0, https://github.com/WIAS-PDELib/ChargeTransport.jl, 2026

  2. D. H. Doan, P. Farrell, J. Fuhrmann, M. Kantner, T. Koprucki, N. Rotundo. ddfermi – a drift-diffusion simulation tool. Version: 0.1.0, Weierstrass Institute (WIAS), 2018. doi:  10.20347/WIAS.SOFTWARE.14